University POLITEHNICA Bucharest, Romania
Silicon Carbide (SiC) Devices for Automotive Applications
In order to obtain the next generation of large capacity power conversion, SiC devices with higher voltage, higher speed, lower loss and larger temperature capability are desired. The expectation of a greatly expanded area of SiC devices compared to silicon finds more and more justification in experimental results. Simultaneously, the issues of reliability of power systems are becoming increasingly important. This creates a demand for switching and sensors devices with ever-lower losses, with an increase in the operating frequency and temperature. SiC diodes can meet the above mentioned issues .
The paper addresses the state-of-art- in SiC power and sensor diodes. The fundamental edge terminations used to relieve the crowding of the electric field of these devices are presented. An original termination, based on the oxide ramp etching is described and the application of this method to SiC devices is discussed, achieving breakdown voltage of up to 95 % from the ideally value. The best performance of high temperature sensors for automotive applications, based on SiC Schottky barrier devices, obtained in recent years in Romania, is reviewed.